Page 17 from comparison Pny Cs1030 Nvme M2 512Gb

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Compare Pny Cs1030 Nvme M2 512Gbwith Samsung 980 Pro Nvme M2 250Gb

Feature	Pny Cs1030 Nvme M2 512Gb	Samsung 980 Pro Nvme M2 250Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity
Flash Memory Specifications
Sequential Read Speed	2500 megabytes per second (mb/s)	6400 megabytes per second (mb/s)
Sequential Write Speed	1900 megabytes per second (mb/s)	2700 megabytes per second (mb/s)
DRAM Memory	false	true
Operating Temperature Range
Average Lifespan	2,000,000 (MTBF) hour (h)	1,500,000 hours (MTBF) / 150 Terabytes Written (TBW)
NCQ Support	false	false
TRIM Support	true	true
RAID Support	false	false
S.M.A.R.T Support	true	true
Additional Features	APST, ASPM, L1.2 power saving optimizer / ECC (Error Correction Code) Algorithm / End-to-End (E2E) Data Path Protection	-
Certifications and Approvals		-
Size and Dimensions	2 * 22 * 80 millimeter (mm)	2.38 * 22.15 * 80.15 millimeter (mm)
Product Weight	6.6 gram (g)	9 gram (g)
Controller	-
Random Read Speed	-
Random Write Speed	-
DRAM Memory Type	-
Operating Voltage	-	3.3 volt (v)
Power Consumption	-
Encryption Technology	-
LED Status Indicator	-	false

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Compare Pny Cs1030 Nvme M2 512Gbwith Samsung 870 Evo Sata 2 5 Inch 500Gb

PNY VS Samsung

Feature	Pny Cs1030 Nvme M2 512Gb	Samsung 870 Evo Sata 2 5 Inch 500Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions		2.5 inch
Memory Capacity
Flash Memory Specifications
Sequential Read Speed	2500 megabytes per second (mb/s)	560 megabytes per second (mb/s)
Sequential Write Speed	1900 megabytes per second (mb/s)	530 megabytes per second (mb/s)
DRAM Memory	false	true
Operating Temperature Range
Average Lifespan	2,000,000 (MTBF) hour (h)	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)
NCQ Support	false	false
TRIM Support	true	true
RAID Support	false	false
S.M.A.R.T Support	true	true
Additional Features	APST, ASPM, L1.2 power saving optimizer / ECC (Error Correction Code) Algorithm / End-to-End (E2E) Data Path Protection	-
Certifications and Approvals
Size and Dimensions	2 * 22 * 80 millimeter (mm)	6.8 * 69.85 * 100 millimeter (mm)
Product Weight	6.6 gram (g)	45 gram (g)
Controller	-
Random Read Speed	-
Random Write Speed	-
DRAM Memory Type	-
Operating Voltage	-	5 volt (v)
Power Consumption	-
Encryption Technology	-
LED Status Indicator	-	false

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Compare Adata Xpg Spectrix S40G Pcie M2 256Gbwith Pny Cs1030 Nvme M2 512Gb

PNY VS Adata

Feature	Adata Xpg Spectrix S40G Pcie M2 256Gb	Pny Cs1030 Nvme M2 512Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity
Flash Memory Specifications
Sequential Read Speed	2500 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	1900 megabytes per second (mb/s)	1200 megabytes per second (mb/s)
DRAM Memory	false	true
Operating Temperature Range
Average Lifespan	2,000,000 (MTBF) hour (h)	2,000,000 hours (MTBF) / 160 Terabytes Written (TBW)
NCQ Support	false	false
TRIM Support	true	false
RAID Support	false	false
S.M.A.R.T Support	true	false
Additional Features	APST, ASPM, L1.2 power saving optimizer / ECC (Error Correction Code) Algorithm / End-to-End (E2E) Data Path Protection
Certifications and Approvals
Size and Dimensions	2 * 22 * 80 millimeter (mm)	8 * 22 * 80 millimeter (mm)
Product Weight	6.6 gram (g)	13.4 gram (g)
Random Read Speed	-
Random Write Speed	-
Power Consumption	-	0.33W in active mode / 0.14W in standby mode
Encryption Technology	-
LED Status Indicator	-	false

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Compare Pny Cs1030 Nvme M2 512Gbwith Samsung 980 Nvme M2 1Tb

PNY VS Samsung

Feature	Pny Cs1030 Nvme M2 512Gb	Samsung 980 Nvme M2 1Tb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity		1 terabyte (tb)
Flash Memory Specifications
Sequential Read Speed	2500 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	1900 megabytes per second (mb/s)	3000 megabytes per second (mb/s)
DRAM Memory	false	false
Operating Temperature Range
Average Lifespan	2,000,000 (MTBF) hour (h)	1,500,000 hours (MTBF) / 600 Terabytes Written (TBW)
NCQ Support	false	false
TRIM Support	true	true
RAID Support	false	false
S.M.A.R.T Support	true	true
Additional Features	APST, ASPM, L1.2 power saving optimizer / ECC (Error Correction Code) Algorithm / End-to-End (E2E) Data Path Protection	-
Certifications and Approvals
Size and Dimensions	2 * 22 * 80 millimeter (mm)	2.38 * 22.15 * 80.15 millimeter (mm)
Product Weight	6.6 gram (g)	8 gram (g)
Controller	-
Random Read Speed	-
Random Write Speed	-
Operating Voltage	-	3.3 volt (v)
Power Consumption	-
Encryption Technology	-

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Compare Pny Cs1030 Nvme M2 512Gbwith Samsung 980 Pro Nvme M2 1Tb

PNY VS Samsung

Feature	Pny Cs1030 Nvme M2 512Gb	Samsung 980 Pro Nvme M2 1Tb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity		1 terabyte (tb)
Flash Memory Specifications
Sequential Read Speed	2500 megabytes per second (mb/s)	7000 megabytes per second (mb/s)
Sequential Write Speed	1900 megabytes per second (mb/s)	5000 megabytes per second (mb/s)
DRAM Memory	false	true
Operating Temperature Range
Average Lifespan	2,000,000 (MTBF) hour (h)	1,500,000 hours (MTBF) / 600 Terabytes Written (TBW)
NCQ Support	false	false
TRIM Support	true	true
RAID Support	false	false
S.M.A.R.T Support	true	true
Additional Features	APST, ASPM, L1.2 power saving optimizer / ECC (Error Correction Code) Algorithm / End-to-End (E2E) Data Path Protection	-
Certifications and Approvals		-
Size and Dimensions	2 * 22 * 80 millimeter (mm)	2.38 * 22.15 * 80.15 millimeter (mm)
Product Weight	6.6 gram (g)	9 gram (g)
Controller	-
Random Read Speed	-
Random Write Speed	-
DRAM Memory Type	-
Operating Voltage	-	3.3 volt (v)
Power Consumption	-
Encryption Technology	-
LED Status Indicator	-	false

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Compare Adata Xpg Sx8200 Pro Pcie M2 256Gbwith Pny Cs1030 Nvme M2 512Gb

PNY VS Adata

Feature	Adata Xpg Sx8200 Pro Pcie M2 256Gb	Pny Cs1030 Nvme M2 512Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity
Flash Memory Specifications
Sequential Read Speed	2500 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	1900 megabytes per second (mb/s)	1200 megabytes per second (mb/s)
DRAM Memory	false	true
Operating Temperature Range		0 to 70 degrees Celsius
Average Lifespan	2,000,000 (MTBF) hour (h)	2,000,000 hours (MTBF) / 160 Terabytes Written (TBW)
NCQ Support	false	false
TRIM Support	true	false
RAID Support	false	true
S.M.A.R.T Support	true	false
Additional Features	APST, ASPM, L1.2 power saving optimizer / ECC (Error Correction Code) Algorithm / End-to-End (E2E) Data Path Protection	-
Certifications and Approvals
Size and Dimensions	2 * 22 * 80 millimeter (mm)	3.5 * 22 * 80 millimeter (mm)
Product Weight	6.6 gram (g)	8 gram (g)
Controller	-
Random Read Speed	-
Random Write Speed	-
DRAM Memory Type	-
Power Consumption	-
LED Status Indicator	-	false

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Compare Pny Cs1030 Nvme M2 512Gbwith Samsung 970 Pro M2 1Tb

PNY VS Samsung

Feature	Pny Cs1030 Nvme M2 512Gb	Samsung 970 Pro M2 1Tb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity		1 terabyte (tb)
Flash Memory Specifications
Sequential Read Speed	2500 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	1900 megabytes per second (mb/s)	2700 megabytes per second (mb/s)
DRAM Memory	false	true
Operating Temperature Range
Average Lifespan	2,000,000 (MTBF) hour (h)	1,500,000 hours (MTBF) / 1200 Terabytes Written (TBW)
NCQ Support	false	false
TRIM Support	true	true
RAID Support	false	false
S.M.A.R.T Support	true	true
Additional Features	APST, ASPM, L1.2 power saving optimizer / ECC (Error Correction Code) Algorithm / End-to-End (E2E) Data Path Protection	Suitable for Gaming / Magician Software for SSD
Certifications and Approvals		-
Size and Dimensions	2 * 22 * 80 millimeter (mm)	2.38 * 22.15 * 80.15 millimeter (mm)
Product Weight	6.6 gram (g)	8 gram (g)
Controller	-
Random Read Speed	-
Random Write Speed	-
DRAM Memory Type	-
Operating Voltage	-	3.3 volt (v)
Power Consumption	-	5.2W in read mode / 5.7W in write mode / 8.5W in maximum mode / 0.03W in standby mode
Encryption Technology	-
LED Status Indicator	-	false

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Compare Pny Cs1030 Nvme M2 512Gbwith Samsung 970 Evo Plus Nvme M2 500Gb

PNY VS Samsung

Feature	Pny Cs1030 Nvme M2 512Gb	Samsung 970 Evo Plus Nvme M2 500Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity
Flash Memory Specifications
Sequential Read Speed	2500 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	1900 megabytes per second (mb/s)	3200 megabytes per second (mb/s)
DRAM Memory	false	true
Operating Temperature Range
Average Lifespan	2,000,000 (MTBF) hour (h)	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)
NCQ Support	false	false
TRIM Support	true	true
RAID Support	false	false
S.M.A.R.T Support	true	true
Additional Features	APST, ASPM, L1.2 power saving optimizer / ECC (Error Correction Code) Algorithm / End-to-End (E2E) Data Path Protection
Certifications and Approvals		-
Size and Dimensions	2 * 22 * 80 millimeter (mm)	2.38 * 22.15 * 80.15 millimeter (mm)
Product Weight	6.6 gram (g)	8 gram (g)
Controller	-
Random Read Speed	-
Random Write Speed	-
DRAM Memory Type	-
Operating Voltage	-	3.3 volt (v)
Power Consumption	-	5.5W in read mode / 5.8W in write mode / 0.03W in standby mode
Encryption Technology	-
LED Status Indicator	-	false

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