Page 12 from comparison PNY CS2140 NVMe M.2 1TB capacity

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Compare PNY CS2140 NVMe M.2 1TB capacitywith Toshiba Canvio Ready USB 3.2 4TB capacity

Feature

PNY CS2140 NVMe M.2 1TB capacity

Toshiba Canvio Ready USB 3.2 4TB capacity

Memory Usage Type Internal External
Memory Connection Port -
Storage Connection Details -
Device Design and Dimensions 2.5 inch
Memory Capacity 1 terabyte (tb) 4 terabyte (tb)
Flash Memory Specifications -
Controller -
Sequential Read Speed 3600 megabytes per second (mb/s) -
Sequential Write Speed 3200 megabytes per second (mb/s) -
DRAM Memory false false
NCQ Support false false
TRIM Support false false
RAID Support false false
S.M.A.R.T Support false false
Size and Dimensions 4 * 22 * 80 millimeter (mm) 19.5 * 78 * 109 millimeter (mm)
LED Status Indicator false false
Connection Type - Micro-B to Type-A USB 3.2 Gen 1
Compatible Operating Systems - Windows 8.1 and later / macOS version 10.13 and later
Additional Features - NTFS / 5 Gbps data transfer speed
Product Weight - 2175 gram (g)

Compare PNY CS2140 NVMe M.2 1TB capacitywith Team Group T-Force VULCAN SATA 2.5 Inch 500GB capacity

Feature

PNY CS2140 NVMe M.2 1TB capacity

Team Group T-Force VULCAN SATA 2.5 Inch 500GB capacity

Memory Usage Type Internal Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions 2.5 inch
Memory Capacity 1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed 3600 megabytes per second (mb/s) 560 megabytes per second (mb/s)
Sequential Write Speed 3200 megabytes per second (mb/s) 510 megabytes per second (mb/s)
DRAM Memory false true
NCQ Support false true
TRIM Support false true
RAID Support false false
S.M.A.R.T Support false true
Size and Dimensions 4 * 22 * 80 millimeter (mm) 7 * 69.9 * 100 millimeter (mm)
LED Status Indicator false false
Random Read Speed -
Random Write Speed -
DRAM Memory Type -
Operating Temperature Range -
Operating Voltage - 5 volt (v)
Average Lifespan - 1,000,000 hours (MTBF) / 240 Terabytes Written (TBW)
Compatible Operating Systems - Windows version 7 and later / macOS version 10.4 and later / Linux Kernel 2.6.33 and later

Compare Msi Spatium M480 Hs Nvme M2 1Tbwith PNY CS2140 NVMe M.2 1TB capacity

Feature

Msi Spatium M480 Hs Nvme M2 1Tb

PNY CS2140 NVMe M.2 1TB capacity

Memory Usage Type Internal Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity 1 terabyte (tb) 1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed 3600 megabytes per second (mb/s) 7000 megabytes per second (mb/s)
Sequential Write Speed 3200 megabytes per second (mb/s) 5500 megabytes per second (mb/s)
DRAM Memory false true
NCQ Support false false
TRIM Support false true
RAID Support false false
S.M.A.R.T Support false true
Size and Dimensions 4 * 22 * 80 millimeter (mm) 2.15 x 22 x 80 mm (without heatsink) / 20.4 x 23 x 80.4 mm (with heatsink)
LED Status Indicator false false
Random Read Speed -
Random Write Speed -
DRAM Memory Type - DDR4 with 1GB cache memory
Operating Temperature Range - 0 to 70 degrees Celsius
Average Lifespan - 1,600,000 hours (MTBF) / 700 Terabytes Written (TBW)
Power Consumption -
Encryption Technology -
Additional Features - Advanced LDPC ECC Algorithm / End-to-End (E2E) Data Path Protection

Compare PNY CS2140 NVMe M.2 1TB capacitywith Seagate Firecuda 530 Heatsink 2Tb

Feature

PNY CS2140 NVMe M.2 1TB capacity

Seagate Firecuda 530 Heatsink 2Tb

Memory Usage Type Internal Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity 1 terabyte (tb) 2 terabyte (tb)
Flash Memory Specifications
Controller -
Sequential Read Speed 3600 megabytes per second (mb/s) 7250 megabytes per second (mb/s)
Sequential Write Speed 3200 megabytes per second (mb/s) 6900 megabytes per second (mb/s)
DRAM Memory false false
NCQ Support false false
TRIM Support false true
RAID Support false false
S.M.A.R.T Support false true
Size and Dimensions 4 * 22 * 80 millimeter (mm) 11.04 * 24.2 * 80.16 millimeter (mm)
LED Status Indicator false false
Random Read Speed -
Random Write Speed -
Operating Temperature Range -
Average Lifespan - 1,800,000 hours (MTBF) / 5100 Terabytes Written (TBW)
Power Consumption -
Certifications and Approvals -
Product Weight - 47 gram (g)

Compare Gigabyte Aorus Gen4 Nvme M2 1Tb Gp Asm2Ne6100Tttdwith PNY CS2140 NVMe M.2 1TB capacity

Feature

Gigabyte Aorus Gen4 Nvme M2 1Tb Gp Asm2Ne6100Tttd

PNY CS2140 NVMe M.2 1TB capacity

Memory Usage Type Internal Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity 1 terabyte (tb) 1 terabyte (tb)
Flash Memory Specifications Toshiba BiCS4 96-Layers 3D TLC NAND
Controller
Sequential Read Speed 3600 megabytes per second (mb/s) 5000 megabytes per second (mb/s)
Sequential Write Speed 3200 megabytes per second (mb/s) 4400 megabytes per second (mb/s)
DRAM Memory false true
NCQ Support false false
TRIM Support false true
RAID Support false false
S.M.A.R.T Support false true
Size and Dimensions 4 * 22 * 80 millimeter (mm) 11.25 * 23.5 * 80.5 millimeter (mm)
LED Status Indicator false false
Random Read Speed -
Random Write Speed -
DRAM Memory Type -
Operating Temperature Range -
Average Lifespan - 1,770,000 hours (MTBF) / 1800 Terabytes Written (TBW)
Power Consumption -
Additional Features - Copper heatsink / Advanced LDPC ECC Algorithm / Wear Leveling capability for increased memory lifespan / Over Provision capability for increasing write speed without performance reduction / SSD Tool Box software

Compare PNY CS2140 NVMe M.2 1TB capacitywith Samsung 860 Qvo 2Tb

Feature

PNY CS2140 NVMe M.2 1TB capacity

Samsung 860 Qvo 2Tb

Memory Usage Type Internal Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions 2.5 inch
Memory Capacity 1 terabyte (tb) 2 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed 3600 megabytes per second (mb/s) 550 megabytes per second (mb/s)
Sequential Write Speed 3200 megabytes per second (mb/s) 520 megabytes per second (mb/s)
DRAM Memory false true
NCQ Support false false
TRIM Support false true
RAID Support false false
S.M.A.R.T Support false true
Size and Dimensions 4 * 22 * 80 millimeter (mm) 6.8 * 69.85 * 100 millimeter (mm)
LED Status Indicator false false
Random Read Speed -
Random Write Speed -
DRAM Memory Type -
Operating Temperature Range -
Operating Voltage - 5 volt (v)
Average Lifespan - 1,500,000 hours (MTBF) / 720 Terabytes Written (TBW)
Power Consumption -
Encryption Technology -
Product Weight - 62 gram (g)

Compare PNY CS2140 NVMe M.2 1TB capacitywith Samsung 860 Pro Sata 2 5 Inch 4Tb

Feature

PNY CS2140 NVMe M.2 1TB capacity

Samsung 860 Pro Sata 2 5 Inch 4Tb

Memory Usage Type Internal Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions 2.5 inch
Memory Capacity 1 terabyte (tb) 4 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed 3600 megabytes per second (mb/s) 560 megabytes per second (mb/s)
Sequential Write Speed 3200 megabytes per second (mb/s) 530 megabytes per second (mb/s)
DRAM Memory false true
NCQ Support false false
TRIM Support false true
RAID Support false false
S.M.A.R.T Support false true
Size and Dimensions 4 * 22 * 80 millimeter (mm) 100 x 69.85 x 6.8 mm
LED Status Indicator false -
Random Read Speed -
Random Write Speed -
DRAM Memory Type -
Operating Temperature Range -
Operating Voltage - 5 volt (v)
Average Lifespan - 1,500,000 hours (MTBF) / 4800 Terabytes Written (TBW)
Power Consumption -
Encryption Technology -
Product Weight - 62 gram (g)

Compare PNY CS2140 NVMe M.2 1TB capacitywith Team Group T-Force CARDEA Liquid NVMe M.2 512GB capacity

Feature

PNY CS2140 NVMe M.2 1TB capacity

Team Group T-Force CARDEA Liquid NVMe M.2 512GB capacity

Memory Usage Type Internal Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity 1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed 3600 megabytes per second (mb/s) 3400 megabytes per second (mb/s)
Sequential Write Speed 3200 megabytes per second (mb/s) 2000 megabytes per second (mb/s)
DRAM Memory false false
NCQ Support false false
TRIM Support false true
RAID Support false false
S.M.A.R.T Support false true
Size and Dimensions 4 * 22 * 80 millimeter (mm) 14.1 * 24.3 * 83.9 millimeter (mm)
LED Status Indicator false false
Random Read Speed -
Random Write Speed -
Operating Temperature Range -
Operating Voltage - 3.3 volt (v)
Average Lifespan - 2,000,000 hours (MTBF) / 800 Terabytes Written (TBW)
Compatible Operating Systems - Windows version Vista and later / Linux Kernel 2.6.33 and later
Product Weight - 42 gram (g)
Box Contents - Cooling Liquid / Coolant

Compare PNY CS2140 NVMe M.2 1TB capacitywith Samsung PM9B1 NVMe M.2 2242 256GB capacity

Feature

PNY CS2140 NVMe M.2 1TB capacity

Samsung PM9B1 NVMe M.2 2242 256GB capacity

Memory Usage Type Internal Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity 1 terabyte (tb)
Flash Memory Specifications -
Controller -
Sequential Read Speed 3600 megabytes per second (mb/s) 2400 megabytes per second (mb/s)
Sequential Write Speed 3200 megabytes per second (mb/s) 940 megabytes per second (mb/s)
DRAM Memory false false
NCQ Support false -
TRIM Support false -
RAID Support false -
S.M.A.R.T Support false -
Size and Dimensions 4 * 22 * 80 millimeter (mm) 2.3 * 22 * 42 millimeter (mm)
LED Status Indicator false false
Operating Temperature Range - 0 to 70 degrees Celsius
Operating Voltage - 3.3 volt (v)
Average Lifespan - 1,750,000 (MTTF) hour (h)
Product Weight - 3.9 gram (g)

Compare Klevv Cras C710 Nvme M2 1Tbwith PNY CS2140 NVMe M.2 1TB capacity

Feature

Klevv Cras C710 Nvme M2 1Tb

PNY CS2140 NVMe M.2 1TB capacity

Memory Usage Type Internal Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity 1 terabyte (tb) 1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed 3600 megabytes per second (mb/s) 2100 megabytes per second (mb/s)
Sequential Write Speed 3200 megabytes per second (mb/s) 1650 megabytes per second (mb/s)
DRAM Memory false false
NCQ Support false false
TRIM Support false false
RAID Support false false
S.M.A.R.T Support false true
Size and Dimensions 4 * 22 * 80 millimeter (mm) 2.2 * 22 * 80 millimeter (mm)
LED Status Indicator false false
Additional Features - SLC Cache support / Memory temperature monitoring capability / Advanced LDPC ECC algorithm / Wear Leveling capability for increased memory lifespan / End-to-End (E2E) Data Path Protection / Acronis True Image HD 2018 software
Certifications and Approvals -
Product Weight - 7 gram (g)

Compare Adata Legend 750 Nvme M2 500Gbwith PNY CS2140 NVMe M.2 1TB capacity

Feature

Adata Legend 750 Nvme M2 500Gb

PNY CS2140 NVMe M.2 1TB capacity

Memory Usage Type Internal Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity 1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed 3600 megabytes per second (mb/s) 3500 megabytes per second (mb/s)
Sequential Write Speed 3200 megabytes per second (mb/s) 3000 megabytes per second (mb/s)
DRAM Memory false false
NCQ Support false false
TRIM Support false false
RAID Support false false
S.M.A.R.T Support false true
Size and Dimensions 4 * 22 * 80 millimeter (mm) 3.1 × 22 × 80 mm with heatsink / 2.1 × 22 × 80 mm without heatsink
LED Status Indicator false false
Random Read Speed -
Random Write Speed -
Operating Temperature Range - 0 to 70 degrees Celsius
Average Lifespan - 2,000,000 hours (MTBF) / 600 Terabytes Written (TBW)
Encryption Technology -
Additional Features -
Color Options - Blue
Product Weight - 9g with heatsink ** 6.2g without heatsink

Compare Hp Ex950 Nvme M2 1Tbwith PNY CS2140 NVMe M.2 1TB capacity

Feature

Hp Ex950 Nvme M2 1Tb

PNY CS2140 NVMe M.2 1TB capacity

Memory Usage Type Internal Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity 1 terabyte (tb) 1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed 3600 megabytes per second (mb/s) 3500 megabytes per second (mb/s)
Sequential Write Speed 3200 megabytes per second (mb/s) 2900 megabytes per second (mb/s)
DRAM Memory false true
NCQ Support false true
TRIM Support false true
RAID Support false false
S.M.A.R.T Support false true
Size and Dimensions 4 * 22 * 80 millimeter (mm) 3.8 * 22 * 80 millimeter (mm)
LED Status Indicator false false
Random Read Speed -
Random Write Speed -
DRAM Memory Type -
Operating Temperature Range -
Average Lifespan - 2,000,000 hours (MTBF) / 650 Terabytes Written (TBW)
Power Consumption - 6.93W in active mode / 0.73W in Idle mode
Compatible Operating Systems - Windows
Additional Features -
Certifications and Approvals -
Product Weight - 5.4 gram (g)