Page 16 from comparison PNY CS2140 NVMe M.2 1TB capacity

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Compare PNY CS2140 NVMe M.2 1TB capacitywith Samsung 970 Evo Plus Nvme M2 500Gb

Feature	PNY CS2140 NVMe M.2 1TB capacity	Samsung 970 Evo Plus Nvme M2 500Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity	1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed	3600 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	3200 megabytes per second (mb/s)	3200 megabytes per second (mb/s)
DRAM Memory	false	true
NCQ Support	false	false
TRIM Support	false	true
RAID Support	false	false
S.M.A.R.T Support	false	true
Size and Dimensions	4 * 22 * 80 millimeter (mm)	2.38 * 22.15 * 80.15 millimeter (mm)
LED Status Indicator	false	false
Random Read Speed	-
Random Write Speed	-
DRAM Memory Type	-
Operating Temperature Range	-
Operating Voltage	-	3.3 volt (v)
Average Lifespan	-	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)
Power Consumption	-	5.5W in read mode / 5.8W in write mode / 0.03W in standby mode
Encryption Technology	-
Additional Features	-
Product Weight	-	8 gram (g)

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Compare PNY CS2140 NVMe M.2 1TB capacitywith Samsung 970 Evo Plus Pcie M2 250Gb

PNY VS Samsung

Feature	PNY CS2140 NVMe M.2 1TB capacity	Samsung 970 Evo Plus Pcie M2 250Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity	1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed	3600 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	3200 megabytes per second (mb/s)	2300 megabytes per second (mb/s)
DRAM Memory	false	true
NCQ Support	false	false
TRIM Support	false	true
RAID Support	false	false
S.M.A.R.T Support	false	true
Size and Dimensions	4 * 22 * 80 millimeter (mm)	2.38 * 22.15 * 80.15 millimeter (mm)
LED Status Indicator	false	false
Random Read Speed	-
Random Write Speed	-
DRAM Memory Type	-
Operating Temperature Range	-
Operating Voltage	-	3.3 volt (v)
Average Lifespan	-	1,500,000 hours (MTBF) / 150 Terabytes Written (TBW)
Power Consumption	-	5W in read mode / 4.2W in write mode / 0.03W in standby mode
Encryption Technology	-
Additional Features	-
Product Weight	-	8 gram (g)

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Compare PNY CS2140 NVMe M.2 1TB capacitywith Samsung 970 Evo Plus Pcie M2 1Tb

PNY VS Samsung

Feature	PNY CS2140 NVMe M.2 1TB capacity	Samsung 970 Evo Plus Pcie M2 1Tb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity	1 terabyte (tb)	1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed	3600 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	3200 megabytes per second (mb/s)	3300 megabytes per second (mb/s)
DRAM Memory	false	true
NCQ Support	false	false
TRIM Support	false	true
RAID Support	false	false
S.M.A.R.T Support	false	true
Size and Dimensions	4 * 22 * 80 millimeter (mm)	2.38 * 22.15 * 80.15 millimeter (mm)
LED Status Indicator	false	false
Random Read Speed	-
Random Write Speed	-
DRAM Memory Type	-
Operating Temperature Range	-
Operating Voltage	-	3.3 volt (v)
Average Lifespan	-	1,500,000 hours (MTBF) / 600 Terabytes Written (TBW)
Power Consumption	-
Encryption Technology	-
Product Weight	-	8 gram (g)

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Compare PNY CS2140 NVMe M.2 1TB capacitywith Samsung 970 Evo Nvme M2 500Gb

PNY VS Samsung

Feature	PNY CS2140 NVMe M.2 1TB capacity	Samsung 970 Evo Nvme M2 500Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity	1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed	3600 megabytes per second (mb/s)	3400 megabytes per second (mb/s)
Sequential Write Speed	3200 megabytes per second (mb/s)	2300 megabytes per second (mb/s)
DRAM Memory	false	true
NCQ Support	false	false
TRIM Support	false	true
RAID Support	false	false
S.M.A.R.T Support	false	true
Size and Dimensions	4 * 22 * 80 millimeter (mm)	2.38 * 22.15 * 80.15 millimeter (mm)
LED Status Indicator	false	false
Random Read Speed	-
Random Write Speed	-
DRAM Memory Type	-
Operating Temperature Range	-
Operating Voltage	-	3.3 volt (v)
Average Lifespan	-	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)
Power Consumption	-
Encryption Technology	-
Product Weight	-	8 gram (g)

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Compare PNY CS2140 NVMe M.2 1TB capacitywith Samsung 980 Pro Nvme M2 250Gb

PNY VS Samsung

Feature	PNY CS2140 NVMe M.2 1TB capacity	Samsung 980 Pro Nvme M2 250Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity	1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed	3600 megabytes per second (mb/s)	6400 megabytes per second (mb/s)
Sequential Write Speed	3200 megabytes per second (mb/s)	2700 megabytes per second (mb/s)
DRAM Memory	false	true
NCQ Support	false	false
TRIM Support	false	true
RAID Support	false	false
S.M.A.R.T Support	false	true
Size and Dimensions	4 * 22 * 80 millimeter (mm)	2.38 * 22.15 * 80.15 millimeter (mm)
LED Status Indicator	false	false
Random Read Speed	-
Random Write Speed	-
DRAM Memory Type	-
Operating Temperature Range	-
Operating Voltage	-	3.3 volt (v)
Average Lifespan	-	1,500,000 hours (MTBF) / 150 Terabytes Written (TBW)
Power Consumption	-
Encryption Technology	-
Product Weight	-	9 gram (g)

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Compare PNY CS2140 NVMe M.2 1TB capacitywith Samsung 980 Pro Nvme M2 1Tb

PNY VS Samsung

Feature	PNY CS2140 NVMe M.2 1TB capacity	Samsung 980 Pro Nvme M2 1Tb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity	1 terabyte (tb)	1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed	3600 megabytes per second (mb/s)	7000 megabytes per second (mb/s)
Sequential Write Speed	3200 megabytes per second (mb/s)	5000 megabytes per second (mb/s)
DRAM Memory	false	true
NCQ Support	false	false
TRIM Support	false	true
RAID Support	false	false
S.M.A.R.T Support	false	true
Size and Dimensions	4 * 22 * 80 millimeter (mm)	2.38 * 22.15 * 80.15 millimeter (mm)
LED Status Indicator	false	false
Random Read Speed	-
Random Write Speed	-
DRAM Memory Type	-
Operating Temperature Range	-
Operating Voltage	-	3.3 volt (v)
Average Lifespan	-	1,500,000 hours (MTBF) / 600 Terabytes Written (TBW)
Power Consumption	-
Encryption Technology	-
Product Weight	-	9 gram (g)

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Compare PNY CS2140 NVMe M.2 1TB capacitywith Samsung 980 Nvme M2 1Tb

PNY VS Samsung

Feature	PNY CS2140 NVMe M.2 1TB capacity	Samsung 980 Nvme M2 1Tb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity	1 terabyte (tb)	1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed	3600 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	3200 megabytes per second (mb/s)	3000 megabytes per second (mb/s)
DRAM Memory	false	false
NCQ Support	false	false
TRIM Support	false	true
RAID Support	false	false
S.M.A.R.T Support	false	true
Size and Dimensions	4 * 22 * 80 millimeter (mm)	2.38 * 22.15 * 80.15 millimeter (mm)
LED Status Indicator	false	-
Random Read Speed	-
Random Write Speed	-
Operating Temperature Range	-
Operating Voltage	-	3.3 volt (v)
Average Lifespan	-	1,500,000 hours (MTBF) / 600 Terabytes Written (TBW)
Power Consumption	-
Encryption Technology	-
Certifications and Approvals	-
Product Weight	-	8 gram (g)

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Compare Lexar Nm620 Nvme M2 1Tbwith PNY CS2140 NVMe M.2 1TB capacity

PNY VS Lexar

Feature	Lexar Nm620 Nvme M2 1Tb	PNY CS2140 NVMe M.2 1TB capacity
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity	1 terabyte (tb)	1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed	3600 megabytes per second (mb/s)	3300 megabytes per second (mb/s)
Sequential Write Speed	3200 megabytes per second (mb/s)	3000 megabytes per second (mb/s)
DRAM Memory	false	false
NCQ Support	false	false
TRIM Support	false	false
RAID Support	false	false
S.M.A.R.T Support	false	false
Size and Dimensions	4 * 22 * 80 millimeter (mm)	2.25 * 22 * 80 millimeter (mm)
LED Status Indicator	false	false
Random Read Speed	-
Random Write Speed	-
Operating Temperature Range	-
Average Lifespan	-	1,500,000 hours (MTBF) / 500 Terabytes Written (TBW)
Additional Features	-
Product Weight	-	9 gram (g)

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Compare PNY CS2140 NVMe M.2 1TB capacitywith Samsung 970 Pro M2 1Tb

PNY VS Samsung

Feature	PNY CS2140 NVMe M.2 1TB capacity	Samsung 970 Pro M2 1Tb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity	1 terabyte (tb)	1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed	3600 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	3200 megabytes per second (mb/s)	2700 megabytes per second (mb/s)
DRAM Memory	false	true
NCQ Support	false	false
TRIM Support	false	true
RAID Support	false	false
S.M.A.R.T Support	false	true
Size and Dimensions	4 * 22 * 80 millimeter (mm)	2.38 * 22.15 * 80.15 millimeter (mm)
LED Status Indicator	false	false
Random Read Speed	-
Random Write Speed	-
DRAM Memory Type	-
Operating Temperature Range	-
Operating Voltage	-	3.3 volt (v)
Average Lifespan	-	1,500,000 hours (MTBF) / 1200 Terabytes Written (TBW)
Power Consumption	-	5.2W in read mode / 5.7W in write mode / 8.5W in maximum mode / 0.03W in standby mode
Encryption Technology	-
Additional Features	-	Suitable for Gaming / Magician Software for SSD
Product Weight	-	8 gram (g)

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