Page 11 from comparison Hp 717965 B21 120Gb

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Compare Hp 717965 B21 120Gbwith Lexar Nm620 Nvme M2 512Gb

Feature	Hp 717965 B21 120Gb	Lexar Nm620 Nvme M2 512Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions	2.5 inch
Memory Capacity
Flash Memory Specifications
Sequential Read Speed	410 megabytes per second (mb/s)	3300 megabytes per second (mb/s)
Sequential Write Speed	130 megabytes per second (mb/s)	2400 megabytes per second (mb/s)
Random Read Speed
DRAM Memory	false	false
Operating Temperature Range
Average Lifespan	2,000,000 hours (MTBF) / 75 Terabytes Written (TBW)	1,500,000 hours (MTBF) / 250 Terabytes Written (TBW)
Power Consumption	9W in active mode	-
NCQ Support	true	false
TRIM Support	true	false
RAID Support	true	false
S.M.A.R.T Support	false	false
Certifications and Approvals		-
Size and Dimensions	Thickness 15 mm	2.25 * 22 * 80 millimeter (mm)
Product Weight	226.8 gram (g)	9 gram (g)
LED Status Indicator	false	false
Controller	-
Random Write Speed	-
Additional Features	-

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Compare Hp 717965 B21 120Gbwith Twinmos Nvme M 2 1Tb

Hp VS Twinmos

Feature	Hp 717965 B21 120Gb	Twinmos Nvme M 2 1Tb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions	2.5 inch
Memory Capacity		1 terabyte (tb)
Flash Memory Specifications
Sequential Read Speed	410 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	130 megabytes per second (mb/s)	3080 megabytes per second (mb/s)
Random Read Speed
DRAM Memory	false	false
Operating Temperature Range
Average Lifespan	2,000,000 hours (MTBF) / 75 Terabytes Written (TBW)	1,000,000 hours (MTBF) / 1000 Terabytes Written (TBW)
Power Consumption	9W in active mode	-
NCQ Support	true	true
TRIM Support	true	true
RAID Support	true	false
S.M.A.R.T Support	false	true
Certifications and Approvals
Size and Dimensions	Thickness 15 mm	-
Product Weight	226.8 gram (g)	-
LED Status Indicator	false	false
Controller	-
Random Write Speed	-
Operating Voltage	-	3.3 volt (v)
Compatible Operating Systems	-	Windows XP and later / macOS version 10.1 and later / Linux version 2.4 and later
Additional Features	-	Wear Leveling capability for increased memory lifespan

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Compare Hp 717965 B21 120Gbwith Team Group T-Force CARDEA Liquid NVMe M.2 512GB capacity

Hp VS Mg

Feature	Hp 717965 B21 120Gb	Team Group T-Force CARDEA Liquid NVMe M.2 512GB capacity
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions	2.5 inch
Memory Capacity
Flash Memory Specifications
Sequential Read Speed	410 megabytes per second (mb/s)	3400 megabytes per second (mb/s)
Sequential Write Speed	130 megabytes per second (mb/s)	2000 megabytes per second (mb/s)
Random Read Speed
DRAM Memory	false	false
Operating Temperature Range
Average Lifespan	2,000,000 hours (MTBF) / 75 Terabytes Written (TBW)	2,000,000 hours (MTBF) / 800 Terabytes Written (TBW)
Power Consumption	9W in active mode	-
NCQ Support	true	false
TRIM Support	true	true
RAID Support	true	false
S.M.A.R.T Support	false	true
Certifications and Approvals		-
Size and Dimensions	Thickness 15 mm	14.1 * 24.3 * 83.9 millimeter (mm)
Product Weight	226.8 gram (g)	42 gram (g)
LED Status Indicator	false	false
Controller	-
Random Write Speed	-
Operating Voltage	-	3.3 volt (v)
Compatible Operating Systems	-	Windows version Vista and later / Linux Kernel 2.6.33 and later
Box Contents	-	Cooling Liquid / Coolant

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Compare Hp 717965 B21 120Gbwith Team Group T-Force CARDEA Zero Z340 NVMe M.2 512GB capacity

Hp VS Mg

Feature	Hp 717965 B21 120Gb	Team Group T-Force CARDEA Zero Z340 NVMe M.2 512GB capacity
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions	2.5 inch
Memory Capacity
Flash Memory Specifications
Sequential Read Speed	410 megabytes per second (mb/s)	3400 megabytes per second (mb/s)
Sequential Write Speed	130 megabytes per second (mb/s)	2000 megabytes per second (mb/s)
Random Read Speed
DRAM Memory	false	true
Operating Temperature Range
Average Lifespan	2,000,000 hours (MTBF) / 75 Terabytes Written (TBW)	2,000,000 hours (MTBF) / 800 Terabytes Written (TBW)
Power Consumption	9W in active mode	-
NCQ Support	true	false
TRIM Support	true	true
RAID Support	true	false
S.M.A.R.T Support	false	true
Certifications and Approvals		-
Size and Dimensions	Thickness 15 mm	3.7 * 22 * 80 millimeter (mm)
Product Weight	226.8 gram (g)	9 gram (g)
LED Status Indicator	false	false
Controller	-
Random Write Speed	-
DRAM Memory Type	-
Operating Voltage	-	3.3 volt (v)
Compatible Operating Systems	-	Windows version Vista and later / Linux Kernel 2.6.33 and later

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Compare Hp 717965 B21 120Gbwith Samsung PM9B1 NVMe M.2 2242 256GB capacity

Hp VS Samsung

Feature	Hp 717965 B21 120Gb	Samsung PM9B1 NVMe M.2 2242 256GB capacity
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions	2.5 inch
Memory Capacity
Flash Memory Specifications		-
Sequential Read Speed	410 megabytes per second (mb/s)	2400 megabytes per second (mb/s)
Sequential Write Speed	130 megabytes per second (mb/s)	940 megabytes per second (mb/s)
Random Read Speed		-
DRAM Memory	false	false
Operating Temperature Range		0 to 70 degrees Celsius
Average Lifespan	2,000,000 hours (MTBF) / 75 Terabytes Written (TBW)	1,750,000 (MTTF) hour (h)
Power Consumption	9W in active mode	-
NCQ Support	true	-
TRIM Support	true	-
RAID Support	true	-
S.M.A.R.T Support	false	-
Certifications and Approvals		-
Size and Dimensions	Thickness 15 mm	2.3 * 22 * 42 millimeter (mm)
Product Weight	226.8 gram (g)	3.9 gram (g)
LED Status Indicator	false	false
Operating Voltage	-	3.3 volt (v)

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Compare Crucial P2 Nvme M2 1Tbwith Hp 717965 B21 120Gb

Hp VS Crucial

Feature	Crucial P2 Nvme M2 1Tb	Hp 717965 B21 120Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions	2.5 inch
Memory Capacity		1 terabyte (tb)
Flash Memory Specifications
Sequential Read Speed	410 megabytes per second (mb/s)	2400 megabytes per second (mb/s)
Sequential Write Speed	130 megabytes per second (mb/s)	1800 megabytes per second (mb/s)
Random Read Speed		-
DRAM Memory	false	false
Operating Temperature Range
Average Lifespan	2,000,000 hours (MTBF) / 75 Terabytes Written (TBW)	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)
Power Consumption	9W in active mode	-
NCQ Support	true	false
TRIM Support	true	true
RAID Support	true	true
S.M.A.R.T Support	false	true
Certifications and Approvals
Size and Dimensions	Thickness 15 mm	2.4 * 22 * 80 millimeter (mm)
Product Weight	226.8 gram (g)	20 gram (g)
LED Status Indicator	false	-
Controller	-
Operating Voltage	-	3.3 volt (v)

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Compare Hp 717965 B21 120Gbwith Western Digital Blue Sn570 Nvme M2 500Gb

Hp VS Blu

Feature	Hp 717965 B21 120Gb	Western Digital Blue Sn570 Nvme M2 500Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions	2.5 inch
Memory Capacity
Flash Memory Specifications
Sequential Read Speed	410 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	130 megabytes per second (mb/s)	2300 megabytes per second (mb/s)
Random Read Speed
DRAM Memory	false	false
Operating Temperature Range		0 to 70 degrees Celsius
Average Lifespan	2,000,000 hours (MTBF) / 75 Terabytes Written (TBW)	1,500,000 hours (MTTF) / 300 Terabytes Written (TBW)
Power Consumption	9W in active mode
NCQ Support	true	false
TRIM Support	true	false
RAID Support	true	false
S.M.A.R.T Support	false	false
Certifications and Approvals
Size and Dimensions	Thickness 15 mm	2.38 * 22 * 80 millimeter (mm)
Product Weight	226.8 gram (g)	6.5 gram (g)
LED Status Indicator	false	false
Random Write Speed	-
Additional Features	-

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Compare Hp 717965 B21 120Gbwith Samsung 870 Evo Sata 2 5 Inch 500Gb

Hp VS Samsung

Feature	Hp 717965 B21 120Gb	Samsung 870 Evo Sata 2 5 Inch 500Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions	2.5 inch	2.5 inch
Memory Capacity
Flash Memory Specifications
Sequential Read Speed	410 megabytes per second (mb/s)	560 megabytes per second (mb/s)
Sequential Write Speed	130 megabytes per second (mb/s)	530 megabytes per second (mb/s)
Random Read Speed
DRAM Memory	false	true
Operating Temperature Range
Average Lifespan	2,000,000 hours (MTBF) / 75 Terabytes Written (TBW)	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)
Power Consumption	9W in active mode
NCQ Support	true	false
TRIM Support	true	true
RAID Support	true	false
S.M.A.R.T Support	false	true
Certifications and Approvals
Size and Dimensions	Thickness 15 mm	6.8 * 69.85 * 100 millimeter (mm)
Product Weight	226.8 gram (g)	45 gram (g)
LED Status Indicator	false	false
Controller	-
Random Write Speed	-
DRAM Memory Type	-
Operating Voltage	-	5 volt (v)
Encryption Technology	-

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Compare Hp 717965 B21 120Gbwith Samsung 980 Nvme M2 1Tb

Hp VS Samsung

Feature	Hp 717965 B21 120Gb	Samsung 980 Nvme M2 1Tb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions	2.5 inch
Memory Capacity		1 terabyte (tb)
Flash Memory Specifications
Sequential Read Speed	410 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	130 megabytes per second (mb/s)	3000 megabytes per second (mb/s)
Random Read Speed
DRAM Memory	false	false
Operating Temperature Range
Average Lifespan	2,000,000 hours (MTBF) / 75 Terabytes Written (TBW)	1,500,000 hours (MTBF) / 600 Terabytes Written (TBW)
Power Consumption	9W in active mode
NCQ Support	true	false
TRIM Support	true	true
RAID Support	true	false
S.M.A.R.T Support	false	true
Certifications and Approvals
Size and Dimensions	Thickness 15 mm	2.38 * 22.15 * 80.15 millimeter (mm)
Product Weight	226.8 gram (g)	8 gram (g)
LED Status Indicator	false	-
Controller	-
Random Write Speed	-
Operating Voltage	-	3.3 volt (v)
Encryption Technology	-

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Compare Hp 717965 B21 120Gbwith Lexar Nm620 Nvme M2 1Tb

Hp VS Lexar

Feature	Hp 717965 B21 120Gb	Lexar Nm620 Nvme M2 1Tb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions	2.5 inch
Memory Capacity		1 terabyte (tb)
Flash Memory Specifications
Sequential Read Speed	410 megabytes per second (mb/s)	3300 megabytes per second (mb/s)
Sequential Write Speed	130 megabytes per second (mb/s)	3000 megabytes per second (mb/s)
Random Read Speed
DRAM Memory	false	false
Operating Temperature Range
Average Lifespan	2,000,000 hours (MTBF) / 75 Terabytes Written (TBW)	1,500,000 hours (MTBF) / 500 Terabytes Written (TBW)
Power Consumption	9W in active mode	-
NCQ Support	true	false
TRIM Support	true	false
RAID Support	true	false
S.M.A.R.T Support	false	false
Certifications and Approvals		-
Size and Dimensions	Thickness 15 mm	2.25 * 22 * 80 millimeter (mm)
Product Weight	226.8 gram (g)	9 gram (g)
LED Status Indicator	false	false
Controller	-
Random Write Speed	-
Additional Features	-

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Compare Hp 717965 B21 120Gbwith Samsung 970 Evo Nvme M2 500Gb

Hp VS Samsung

Feature	Hp 717965 B21 120Gb	Samsung 970 Evo Nvme M2 500Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions	2.5 inch
Memory Capacity
Flash Memory Specifications
Sequential Read Speed	410 megabytes per second (mb/s)	3400 megabytes per second (mb/s)
Sequential Write Speed	130 megabytes per second (mb/s)	2300 megabytes per second (mb/s)
Random Read Speed
DRAM Memory	false	true
Operating Temperature Range
Average Lifespan	2,000,000 hours (MTBF) / 75 Terabytes Written (TBW)	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)
Power Consumption	9W in active mode
NCQ Support	true	false
TRIM Support	true	true
RAID Support	true	false
S.M.A.R.T Support	false	true
Certifications and Approvals		-
Size and Dimensions	Thickness 15 mm	2.38 * 22.15 * 80.15 millimeter (mm)
Product Weight	226.8 gram (g)	8 gram (g)
LED Status Indicator	false	false
Controller	-
Random Write Speed	-
DRAM Memory Type	-
Operating Voltage	-	3.3 volt (v)
Encryption Technology	-

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Compare Hp 717965 B21 120Gbwith Samsung 970 Evo Plus Pcie M2 1Tb

Hp VS Samsung

Feature	Hp 717965 B21 120Gb	Samsung 970 Evo Plus Pcie M2 1Tb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions	2.5 inch
Memory Capacity		1 terabyte (tb)
Flash Memory Specifications
Sequential Read Speed	410 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	130 megabytes per second (mb/s)	3300 megabytes per second (mb/s)
Random Read Speed
DRAM Memory	false	true
Operating Temperature Range
Average Lifespan	2,000,000 hours (MTBF) / 75 Terabytes Written (TBW)	1,500,000 hours (MTBF) / 600 Terabytes Written (TBW)
Power Consumption	9W in active mode
NCQ Support	true	false
TRIM Support	true	true
RAID Support	true	false
S.M.A.R.T Support	false	true
Certifications and Approvals		-
Size and Dimensions	Thickness 15 mm	2.38 * 22.15 * 80.15 millimeter (mm)
Product Weight	226.8 gram (g)	8 gram (g)
LED Status Indicator	false	false
Controller	-
Random Write Speed	-
DRAM Memory Type	-
Operating Voltage	-	3.3 volt (v)
Encryption Technology	-

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