Page 13 from comparison Samsung 860 Evo M2 500Gb

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Compare Samsung 860 Evo M2 500Gbwith Zadak TWSG3 NVMe M.2 256GB capacity

Feature	Samsung 860 Evo M2 500Gb	Zadak TWSG3 NVMe M.2 256GB capacity
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity
Flash Memory Specifications
Controller		-
Sequential Read Speed	550 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	520 megabytes per second (mb/s)	3200 megabytes per second (mb/s)
Random Read Speed		-
Random Write Speed		-
DRAM Memory	true	-
DRAM Memory Type		-
Operating Temperature Range
Average Lifespan	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)	1,500,000 (MTBF) hour (h)
Power Consumption		-
NCQ Support	false	-
TRIM Support	true	-
RAID Support	false	-
S.M.A.R.T Support	true	-
Encryption Technology		-
Size and Dimensions	2.38 * 22.15 * 80.15 millimeter (mm)	2.5 * 22 * 80 millimeter (mm)
Product Weight	8 gram (g)	-
Additional Features	-
Certifications and Approvals	-
LED Status Indicator	-	false

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Compare Samsung 860 Evo M2 500Gbwith X-Energy FALCON SATA 2.5 Inch 480GB Capacity

Samsung VS X Energy

Feature	Samsung 860 Evo M2 500Gb	X-Energy FALCON SATA 2.5 Inch 480GB Capacity
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions		2.5 inch
Memory Capacity
Flash Memory Specifications
Controller		-
Sequential Read Speed	550 megabytes per second (mb/s)	500 megabytes per second (mb/s)
Sequential Write Speed	520 megabytes per second (mb/s)	400 megabytes per second (mb/s)
Random Read Speed		-
Random Write Speed		-
DRAM Memory	true	false
DRAM Memory Type		-
Operating Temperature Range
Average Lifespan	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)	2,000,000 (MTBF) hour (h)
Power Consumption		-
NCQ Support	false	false
TRIM Support	true	false
RAID Support	false	false
S.M.A.R.T Support	true	false
Encryption Technology		-
Size and Dimensions	2.38 * 22.15 * 80.15 millimeter (mm)	-
Product Weight	8 gram (g)	-
Operating Voltage	-	5 volt (v)
Additional Features	-
LED Status Indicator	-	false

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Compare Corsair Mp600 Pro Xt Nvme M2 4Tbwith Samsung 860 Evo M2 500Gb

Samsung VS Corsair

Feature	Corsair Mp600 Pro Xt Nvme M2 4Tb	Samsung 860 Evo M2 500Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity		4 terabyte (tb)
Flash Memory Specifications
Controller		-
Sequential Read Speed	550 megabytes per second (mb/s)	7100 megabytes per second (mb/s)
Sequential Write Speed	520 megabytes per second (mb/s)	6800 megabytes per second (mb/s)
Random Read Speed
Random Write Speed
DRAM Memory	true	false
DRAM Memory Type		-
Operating Temperature Range
Average Lifespan	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)	1,800,000 hours (MTBF) / 3000 Terabytes Written (TBW)
Power Consumption		-
NCQ Support	false	false
TRIM Support	true	false
RAID Support	false	false
S.M.A.R.T Support	true	true
Encryption Technology
Size and Dimensions	2.38 * 22.15 * 80.15 millimeter (mm)	-
Product Weight	8 gram (g)	660 gram (g)
Operating Voltage	-	3.3 volt (v)
Additional Features	-
LED Status Indicator	-	false

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Compare Msi Spatium M450 Nvme M2 500Gbwith Samsung 860 Evo M2 500Gb

Samsung VS msi

Feature	Msi Spatium M450 Nvme M2 500Gb	Samsung 860 Evo M2 500Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity
Flash Memory Specifications
Controller
Sequential Read Speed	550 megabytes per second (mb/s)	3600 megabytes per second (mb/s)
Sequential Write Speed	520 megabytes per second (mb/s)	2300 megabytes per second (mb/s)
Random Read Speed
Random Write Speed
DRAM Memory	true	false
DRAM Memory Type		-
Operating Temperature Range		0 to 70 degrees Celsius
Average Lifespan	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)
Power Consumption
NCQ Support	false	false
TRIM Support	true	true
RAID Support	false	false
S.M.A.R.T Support	true	true
Encryption Technology		-
Size and Dimensions	2.38 * 22.15 * 80.15 millimeter (mm)	2.15 * 22 * 80 millimeter (mm)
Product Weight	8 gram (g)	-
Additional Features	-	Advanced LDPC ECC Algorithm / End-to-End (E2E) Data Path Protection
LED Status Indicator	-	false

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Compare Lexar Nm620 Nvme M2 512Gbwith Samsung 860 Evo M2 500Gb

Samsung VS Lexar

Feature	Lexar Nm620 Nvme M2 512Gb	Samsung 860 Evo M2 500Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity
Flash Memory Specifications
Controller
Sequential Read Speed	550 megabytes per second (mb/s)	3300 megabytes per second (mb/s)
Sequential Write Speed	520 megabytes per second (mb/s)	2400 megabytes per second (mb/s)
Random Read Speed
Random Write Speed
DRAM Memory	true	false
DRAM Memory Type		-
Operating Temperature Range
Average Lifespan	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)	1,500,000 hours (MTBF) / 250 Terabytes Written (TBW)
Power Consumption		-
NCQ Support	false	false
TRIM Support	true	false
RAID Support	false	false
S.M.A.R.T Support	true	false
Encryption Technology		-
Size and Dimensions	2.38 * 22.15 * 80.15 millimeter (mm)	2.25 * 22 * 80 millimeter (mm)
Product Weight	8 gram (g)	9 gram (g)
Additional Features	-
LED Status Indicator	-	false

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Compare Samsung 860 Evo M2 500Gbwith Twinmos Nvme M 2 1Tb

Samsung VS Twinmos

Feature	Samsung 860 Evo M2 500Gb	Twinmos Nvme M 2 1Tb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity		1 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed	550 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	520 megabytes per second (mb/s)	3080 megabytes per second (mb/s)
Random Read Speed
Random Write Speed
DRAM Memory	true	false
DRAM Memory Type		-
Operating Temperature Range
Average Lifespan	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)	1,000,000 hours (MTBF) / 1000 Terabytes Written (TBW)
Power Consumption		-
NCQ Support	false	true
TRIM Support	true	true
RAID Support	false	false
S.M.A.R.T Support	true	true
Encryption Technology		-
Size and Dimensions	2.38 * 22.15 * 80.15 millimeter (mm)	-
Product Weight	8 gram (g)	-
Operating Voltage	-	3.3 volt (v)
Compatible Operating Systems	-	Windows XP and later / macOS version 10.1 and later / Linux version 2.4 and later
Additional Features	-	Wear Leveling capability for increased memory lifespan
Certifications and Approvals	-
LED Status Indicator	-	false

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Compare Samsung 860 Evo M2 500Gbwith Western Digital Blue Sn570 Nvme M2 500Gb

Samsung VS Blu

Feature	Samsung 860 Evo M2 500Gb	Western Digital Blue Sn570 Nvme M2 500Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity
Flash Memory Specifications
Controller		-
Sequential Read Speed	550 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	520 megabytes per second (mb/s)	2300 megabytes per second (mb/s)
Random Read Speed
Random Write Speed
DRAM Memory	true	false
DRAM Memory Type		-
Operating Temperature Range		0 to 70 degrees Celsius
Average Lifespan	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)	1,500,000 hours (MTTF) / 300 Terabytes Written (TBW)
Power Consumption
NCQ Support	false	false
TRIM Support	true	false
RAID Support	false	false
S.M.A.R.T Support	true	false
Encryption Technology		-
Size and Dimensions	2.38 * 22.15 * 80.15 millimeter (mm)	2.38 * 22 * 80 millimeter (mm)
Product Weight	8 gram (g)	6.5 gram (g)
Additional Features	-
Certifications and Approvals	-
LED Status Indicator	-	false

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Compare Samsung 860 Evo M2 500Gbwith Samsung PM9B1 NVMe M.2 2242 256GB capacity

Samsung VS Samsung

Feature	Samsung 860 Evo M2 500Gb	Samsung PM9B1 NVMe M.2 2242 256GB capacity
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity
Flash Memory Specifications		-
Controller		-
Sequential Read Speed	550 megabytes per second (mb/s)	2400 megabytes per second (mb/s)
Sequential Write Speed	520 megabytes per second (mb/s)	940 megabytes per second (mb/s)
Random Read Speed		-
Random Write Speed		-
DRAM Memory	true	false
DRAM Memory Type		-
Operating Temperature Range		0 to 70 degrees Celsius
Average Lifespan	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)	1,750,000 (MTTF) hour (h)
Power Consumption		-
NCQ Support	false	-
TRIM Support	true	-
RAID Support	false	-
S.M.A.R.T Support	true	-
Encryption Technology		-
Size and Dimensions	2.38 * 22.15 * 80.15 millimeter (mm)	2.3 * 22 * 42 millimeter (mm)
Product Weight	8 gram (g)	3.9 gram (g)
Operating Voltage	-	3.3 volt (v)
LED Status Indicator	-	false

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Compare Samsung 860 Evo M2 500Gbwith Seagate Firecuda 530 Heatsink 2Tb

Samsung VS Seagate

Feature	Samsung 860 Evo M2 500Gb	Seagate Firecuda 530 Heatsink 2Tb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity		2 terabyte (tb)
Flash Memory Specifications
Controller		-
Sequential Read Speed	550 megabytes per second (mb/s)	7250 megabytes per second (mb/s)
Sequential Write Speed	520 megabytes per second (mb/s)	6900 megabytes per second (mb/s)
Random Read Speed
Random Write Speed
DRAM Memory	true	false
DRAM Memory Type		-
Operating Temperature Range
Average Lifespan	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)	1,800,000 hours (MTBF) / 5100 Terabytes Written (TBW)
Power Consumption
NCQ Support	false	false
TRIM Support	true	true
RAID Support	false	false
S.M.A.R.T Support	true	true
Encryption Technology		-
Size and Dimensions	2.38 * 22.15 * 80.15 millimeter (mm)	11.04 * 24.2 * 80.16 millimeter (mm)
Product Weight	8 gram (g)	47 gram (g)
Certifications and Approvals	-
LED Status Indicator	-	false

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Compare Pny Xlr8 Cs3030 Nvme M2 2Tbwith Samsung 860 Evo M2 500Gb

Samsung VS PNY

Feature	Pny Xlr8 Cs3030 Nvme M2 2Tb	Samsung 860 Evo M2 500Gb
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity		2 terabyte (tb)
Flash Memory Specifications
Controller
Sequential Read Speed	550 megabytes per second (mb/s)	3500 megabytes per second (mb/s)
Sequential Write Speed	520 megabytes per second (mb/s)	3000 megabytes per second (mb/s)
Random Read Speed		-
Random Write Speed		-
DRAM Memory	true	false
DRAM Memory Type		-
Operating Temperature Range
Average Lifespan	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)	2,000,000 hours (MTBF) / 3115 Terabytes Written (TBW)
Power Consumption		-
NCQ Support	false	false
TRIM Support	true	true
RAID Support	false	true
S.M.A.R.T Support	true	true
Encryption Technology
Size and Dimensions	2.38 * 22.15 * 80.15 millimeter (mm)	2 * 22 * 80 millimeter (mm)
Product Weight	8 gram (g)	6.6 gram (g)
Additional Features	-	ECC (Error Correction Code) Algorithm / APST, ASPM, L1.2 power saving optimizer / Secure Erase capability for irreversible data wiping / End-to-End (E2E) Data Path Protection
Certifications and Approvals	-

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Compare Samsung 860 Evo M2 500Gbwith Team Group T-Force CARDEA Zero Z340 NVMe M.2 512GB capacity

Samsung VS Mg

Feature	Samsung 860 Evo M2 500Gb	Team Group T-Force CARDEA Zero Z340 NVMe M.2 512GB capacity
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity
Flash Memory Specifications
Controller
Sequential Read Speed	550 megabytes per second (mb/s)	3400 megabytes per second (mb/s)
Sequential Write Speed	520 megabytes per second (mb/s)	2000 megabytes per second (mb/s)
Random Read Speed
Random Write Speed
DRAM Memory	true	true
DRAM Memory Type
Operating Temperature Range
Average Lifespan	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)	2,000,000 hours (MTBF) / 800 Terabytes Written (TBW)
Power Consumption		-
NCQ Support	false	false
TRIM Support	true	true
RAID Support	false	false
S.M.A.R.T Support	true	true
Encryption Technology		-
Size and Dimensions	2.38 * 22.15 * 80.15 millimeter (mm)	3.7 * 22 * 80 millimeter (mm)
Product Weight	8 gram (g)	9 gram (g)
Operating Voltage	-	3.3 volt (v)
Compatible Operating Systems	-	Windows version Vista and later / Linux Kernel 2.6.33 and later
LED Status Indicator	-	false

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Compare Samsung 860 Evo M2 500Gbwith Team Group T-Force CARDEA Liquid NVMe M.2 512GB capacity

Samsung VS Mg

Feature	Samsung 860 Evo M2 500Gb	Team Group T-Force CARDEA Liquid NVMe M.2 512GB capacity
Memory Usage Type	Internal	Internal
Memory Connection Port
Storage Connection Details
Device Design and Dimensions
Memory Capacity
Flash Memory Specifications
Controller
Sequential Read Speed	550 megabytes per second (mb/s)	3400 megabytes per second (mb/s)
Sequential Write Speed	520 megabytes per second (mb/s)	2000 megabytes per second (mb/s)
Random Read Speed
Random Write Speed
DRAM Memory	true	false
DRAM Memory Type		-
Operating Temperature Range
Average Lifespan	1,500,000 hours (MTBF) / 300 Terabytes Written (TBW)	2,000,000 hours (MTBF) / 800 Terabytes Written (TBW)
Power Consumption		-
NCQ Support	false	false
TRIM Support	true	true
RAID Support	false	false
S.M.A.R.T Support	true	true
Encryption Technology		-
Size and Dimensions	2.38 * 22.15 * 80.15 millimeter (mm)	14.1 * 24.3 * 83.9 millimeter (mm)
Product Weight	8 gram (g)	42 gram (g)
Operating Voltage	-	3.3 volt (v)
Compatible Operating Systems	-	Windows version Vista and later / Linux Kernel 2.6.33 and later
LED Status Indicator	-	false
Box Contents	-	Cooling Liquid / Coolant

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